Micron 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3l-1600-lrdimm-32gb-1x-qr 5V Technology DDR3L Error Correction

5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Configuration 2048M x8 Pieces in Kit 1 Compatibility

HMT351S6AFR8C-G7 Capacity 4GB (1x 4GB) Brand Hynix Speed DDR3L-1066 -1066MT/s - 1067MT/s - PC3L-8500 Voltage 1

M471B1G73BH0-YK0 Capacity 8GB (1x 8GB) Brand Samsung Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1

When it comes to measuring DDR RAM speed

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (1x 16GB) DDR3 1866 MT/s 240-pin RDIMM RAM module from Hynix

Micron 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3l-1600-lrdimm-32gb-1x-qr 5V Technology DDR3L Error CorrectionProduct Overview This 4GB (1x 4GB) DDR3 1333 MT s RAM module from Micron is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.