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5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM CAS Latency CL9 Pieces in Kit 1 Compatibility
This 32GB (2x 16GB) DDR4 2666 MT/s Dual rank
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 32GB (2x 16GB) DDR4 2400 MT/s 288-pin RDIMM RAM kit from Crucial
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (1x 16GB) DDR4 2666 MT/s 260-pin SODIMM RAM module from Samsung
2xM393B5273CH0-YH9 Capacity 8GB (2x 4GB) Brand Samsung Speed DDR3L-1333 - 1333MT/s - PC3L-10600 Voltage 1
Hynix 2GB (1x 2GB) CL7 DDR3-1066 PC3-8500 1.5V 204-pin SODIMM RAM Module Configuration_x16 5V Technology DDR3 Error CorrectionProduct Overview This 2GB (1x 2GB) DDR3 1066 MT s RAM module from Hynix is for use in DDR3 compatible systems and operates at 1066 MT s with an overall transfer rate of PC3 8500. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL7, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
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